Electronic structures and optical properties of Ga doped single-layer indium nitride
Electronic structures and optical properties of single-layer In1−xGaxN are studied by employing Heyd-Scuseria-Ernzerh (HSE) method based on the first-principles. The band structure and density of states (DOS) of single-layer In1−xGaxN are calculated, and the band gap ranges from 1.8 eV to 3.8 eV as...
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Veröffentlicht in: | Chinese journal of chemical physics 2018-06, Vol.31 (3), p.313-317 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Electronic structures and optical properties of single-layer In1−xGaxN are studied by employing Heyd-Scuseria-Ernzerh (HSE) method based on the first-principles. The band structure and density of states (DOS) of single-layer In1−xGaxN are calculated, and the band gap ranges from 1.8 eV to 3.8 eV as the ratio x changes, illustrating the potential for the tunability of band gap values via Ga doped. We also have investigated optical properties of single-layer In1−xGaxN such as dielectric function, refractive index and absorption coefficient, the main peak of dielectric function spectrum and the absorption edge are found to have a remarkable blue-shift as the concentration of Ga increases. Furthermore, the optical properties of single-layer In1−xGaxN are analyzed based on the band structures and DOS analysis. Such unique optical properties have profound application in nanoelectronics and optical devices. |
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ISSN: | 1674-0068 2327-2244 |
DOI: | 10.1063/1674-0068/31/cjcp1711216 |