The effect of irradiation with high-energy electrons on the superconducting transition and the electrical resistivity anisotropy of YВа2Сu3О7−δ single crystals

The temperature dependences of the longitudinal and transverse conductivity of YВа2Сu3О7−δ single crystals irradiated with high-energy electrons were measured. It was found that, in contrast to unexposed YВа2Сu3О7−δ single crystals, the absolute value of the electrical resistivity anisotropy ρc/ρab significantly decreases with an increase in the number of structural defects in the experimental sample volume. The dependence ρc/ρab(Т) is well described both by the universal “1/2 law” and by the usual exponential expression for thermally activated conductivity.