Correlation between the formation of particle defects on sputtered Cu seed layers and Cu targets
For advanced copper (Cu) interconnection applications, this work investigated the influence of impurity particles in the Cu target on the formation of particle defects on the sputtered Cu film. By using a liquid particle counter detection system and X-ray photoelectron spectroscopy, the properties o...
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| Veröffentlicht in: | Micro & nano letters 2019-09, Vol.14 (10), p.1079-1082 |
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| container_title | Micro & nano letters |
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| creator | Bian, Yi-Jun Cha, Ming-Yang Chen, Lin Sun, Qing-Qing Zhang, Wei Ding, Shi-Jin |
| description | For advanced copper (Cu) interconnection applications, this work investigated the influence of impurity particles in the Cu target on the formation of particle defects on the sputtered Cu film. By using a liquid particle counter detection system and X-ray photoelectron spectroscopy, the properties of the impurity particles in the Cu targets were characterised. It is revealed that the impurity particles in the Cu target contain 98.5% carbon, and around 75% impurity particles have a size |
| doi_str_mv | 10.1049/mnl.2019.0139 |
| format | Article |
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By using a liquid particle counter detection system and X-ray photoelectron spectroscopy, the properties of the impurity particles in the Cu targets were characterised. It is revealed that the impurity particles in the Cu target contain 98.5% carbon, and around 75% impurity particles have a size <1 μm and about 10% ones have a size larger than 2 μm. Subsequently, the correlation between carbon particles in the Cu target and particle defects on the sputtered Cu film is explored. For the carbon particles larger than 0.15 μm in the Cu target, the particle defects formed on the Cu seed layer exhibit a pronounced linear increase as a function of the carbon particle number. However, such a linear relationship becomes unclear for the bigger carbon particles; meanwhile, a small quantity of bigger carbon particles in the Cu target also can generate more particle defects on the Cu seed layer in comparison with smaller carbon particles. Moreover, the formation mechanism of particle defects on the Cu seed layer was also discussed.</description><identifier>ISSN: 1750-0443</identifier><identifier>EISSN: 1750-0443</identifier><identifier>DOI: 10.1049/mnl.2019.0139</identifier><language>eng</language><publisher>Stevenage: The Institution of Engineering and Technology</publisher><subject>advanced copper interconnection applications ; Carbon ; carbon particle number ; Copper ; Defects ; Impurities ; impurity particles ; liquid particle counter detection system ; metallic thin films ; particle defects ; Photoelectrons ; Radiation counters ; semiconductor device metallisation ; sputter deposition ; sputtered Cu seed layers ; X‐ray photoelectron spectra ; X‐ray photoelectron spectroscopy</subject><ispartof>Micro & nano letters, 2019-09, Vol.14 (10), p.1079-1082</ispartof><rights>The Institution of Engineering and Technology</rights><rights>2019 The Institution of Engineering and Technology</rights><rights>Copyright The Institution of Engineering & Technology Sep 4, 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3762-85de158f9ea60722372d24dc8689124e797cd9dce39522ebab542580530d95533</citedby><cites>FETCH-LOGICAL-c3762-85de158f9ea60722372d24dc8689124e797cd9dce39522ebab542580530d95533</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1049%2Fmnl.2019.0139$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1049%2Fmnl.2019.0139$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,11562,27924,27925,45574,45575,46052,46476</link.rule.ids><linktorsrc>$$Uhttps://onlinelibrary.wiley.com/doi/abs/10.1049%2Fmnl.2019.0139$$EView_record_in_Wiley-Blackwell$$FView_record_in_$$GWiley-Blackwell</linktorsrc></links><search><creatorcontrib>Bian, Yi-Jun</creatorcontrib><creatorcontrib>Cha, Ming-Yang</creatorcontrib><creatorcontrib>Chen, Lin</creatorcontrib><creatorcontrib>Sun, Qing-Qing</creatorcontrib><creatorcontrib>Zhang, Wei</creatorcontrib><creatorcontrib>Ding, Shi-Jin</creatorcontrib><title>Correlation between the formation of particle defects on sputtered Cu seed layers and Cu targets</title><title>Micro & nano letters</title><description>For advanced copper (Cu) interconnection applications, this work investigated the influence of impurity particles in the Cu target on the formation of particle defects on the sputtered Cu film. By using a liquid particle counter detection system and X-ray photoelectron spectroscopy, the properties of the impurity particles in the Cu targets were characterised. It is revealed that the impurity particles in the Cu target contain 98.5% carbon, and around 75% impurity particles have a size <1 μm and about 10% ones have a size larger than 2 μm. Subsequently, the correlation between carbon particles in the Cu target and particle defects on the sputtered Cu film is explored. For the carbon particles larger than 0.15 μm in the Cu target, the particle defects formed on the Cu seed layer exhibit a pronounced linear increase as a function of the carbon particle number. However, such a linear relationship becomes unclear for the bigger carbon particles; meanwhile, a small quantity of bigger carbon particles in the Cu target also can generate more particle defects on the Cu seed layer in comparison with smaller carbon particles. Moreover, the formation mechanism of particle defects on the Cu seed layer was also discussed.</description><subject>advanced copper interconnection applications</subject><subject>Carbon</subject><subject>carbon particle number</subject><subject>Copper</subject><subject>Defects</subject><subject>Impurities</subject><subject>impurity particles</subject><subject>liquid particle counter detection system</subject><subject>metallic thin films</subject><subject>particle defects</subject><subject>Photoelectrons</subject><subject>Radiation counters</subject><subject>semiconductor device metallisation</subject><subject>sputter deposition</subject><subject>sputtered Cu seed layers</subject><subject>X‐ray photoelectron spectra</subject><subject>X‐ray photoelectron spectroscopy</subject><issn>1750-0443</issn><issn>1750-0443</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9kL1PwzAQxS0EEqUwsltCDAwp_ozjsVQUkNqywGzc-AKp0iTYrqr-96SEoQMwvdPT7-6dHkKXlIwoEfp2XVcjRqgeEcr1ERpQJUlChODHB_MpOgthRYhQTOkBeps03kNlY9nUeAlxC1Dj-AG4aPy6d5sCt9bHMq8AOyggjwF3dmg3MYIHhycbHKDTyu7AB2zrbyta_w4xnKOTwlYBLn50iF6n9y-Tx2T2_PA0Gc-SnKuUJZl0QGVWaLApUYxxxRwTLs_STFMmQGmVO-1y4FoyBku7lILJjEhOnJaS8yG66u-2vvncQIhm1Wx83UUaxjIlpBBsTyU9lfsmBA-FaX25tn5nKDH7Ek1XotmXaPYldnza89uygt3_sJkvxuxuSmjaJQ3RTb9YwsEnf4Vc_8LOF7OD260r-BfJKo4x</recordid><startdate>20190904</startdate><enddate>20190904</enddate><creator>Bian, Yi-Jun</creator><creator>Cha, Ming-Yang</creator><creator>Chen, Lin</creator><creator>Sun, Qing-Qing</creator><creator>Zhang, Wei</creator><creator>Ding, Shi-Jin</creator><general>The Institution of Engineering and Technology</general><general>John Wiley & Sons, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20190904</creationdate><title>Correlation between the formation of particle defects on sputtered Cu seed layers and Cu targets</title><author>Bian, Yi-Jun ; Cha, Ming-Yang ; Chen, Lin ; Sun, Qing-Qing ; Zhang, Wei ; Ding, Shi-Jin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3762-85de158f9ea60722372d24dc8689124e797cd9dce39522ebab542580530d95533</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>advanced copper interconnection applications</topic><topic>Carbon</topic><topic>carbon particle number</topic><topic>Copper</topic><topic>Defects</topic><topic>Impurities</topic><topic>impurity particles</topic><topic>liquid particle counter detection system</topic><topic>metallic thin films</topic><topic>particle defects</topic><topic>Photoelectrons</topic><topic>Radiation counters</topic><topic>semiconductor device metallisation</topic><topic>sputter deposition</topic><topic>sputtered Cu seed layers</topic><topic>X‐ray photoelectron spectra</topic><topic>X‐ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bian, Yi-Jun</creatorcontrib><creatorcontrib>Cha, Ming-Yang</creatorcontrib><creatorcontrib>Chen, Lin</creatorcontrib><creatorcontrib>Sun, Qing-Qing</creatorcontrib><creatorcontrib>Zhang, Wei</creatorcontrib><creatorcontrib>Ding, Shi-Jin</creatorcontrib><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Micro & nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bian, Yi-Jun</au><au>Cha, Ming-Yang</au><au>Chen, Lin</au><au>Sun, Qing-Qing</au><au>Zhang, Wei</au><au>Ding, Shi-Jin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Correlation between the formation of particle defects on sputtered Cu seed layers and Cu targets</atitle><jtitle>Micro & nano letters</jtitle><date>2019-09-04</date><risdate>2019</risdate><volume>14</volume><issue>10</issue><spage>1079</spage><epage>1082</epage><pages>1079-1082</pages><issn>1750-0443</issn><eissn>1750-0443</eissn><abstract>For advanced copper (Cu) interconnection applications, this work investigated the influence of impurity particles in the Cu target on the formation of particle defects on the sputtered Cu film. By using a liquid particle counter detection system and X-ray photoelectron spectroscopy, the properties of the impurity particles in the Cu targets were characterised. It is revealed that the impurity particles in the Cu target contain 98.5% carbon, and around 75% impurity particles have a size <1 μm and about 10% ones have a size larger than 2 μm. Subsequently, the correlation between carbon particles in the Cu target and particle defects on the sputtered Cu film is explored. For the carbon particles larger than 0.15 μm in the Cu target, the particle defects formed on the Cu seed layer exhibit a pronounced linear increase as a function of the carbon particle number. However, such a linear relationship becomes unclear for the bigger carbon particles; meanwhile, a small quantity of bigger carbon particles in the Cu target also can generate more particle defects on the Cu seed layer in comparison with smaller carbon particles. Moreover, the formation mechanism of particle defects on the Cu seed layer was also discussed.</abstract><cop>Stevenage</cop><pub>The Institution of Engineering and Technology</pub><doi>10.1049/mnl.2019.0139</doi><tpages>4</tpages></addata></record> |
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| ispartof | Micro & nano letters, 2019-09, Vol.14 (10), p.1079-1082 |
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| language | eng |
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| source | Wiley Online Library Open Access |
| subjects | advanced copper interconnection applications Carbon carbon particle number Copper Defects Impurities impurity particles liquid particle counter detection system metallic thin films particle defects Photoelectrons Radiation counters semiconductor device metallisation sputter deposition sputtered Cu seed layers X‐ray photoelectron spectra X‐ray photoelectron spectroscopy |
| title | Correlation between the formation of particle defects on sputtered Cu seed layers and Cu targets |
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