Correlation between the formation of particle defects on sputtered Cu seed layers and Cu targets

For advanced copper (Cu) interconnection applications, this work investigated the influence of impurity particles in the Cu target on the formation of particle defects on the sputtered Cu film. By using a liquid particle counter detection system and X-ray photoelectron spectroscopy, the properties o...

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Veröffentlicht in:Micro & nano letters 2019-09, Vol.14 (10), p.1079-1082
Hauptverfasser: Bian, Yi-Jun, Cha, Ming-Yang, Chen, Lin, Sun, Qing-Qing, Zhang, Wei, Ding, Shi-Jin
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Sprache:eng
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Zusammenfassung:For advanced copper (Cu) interconnection applications, this work investigated the influence of impurity particles in the Cu target on the formation of particle defects on the sputtered Cu film. By using a liquid particle counter detection system and X-ray photoelectron spectroscopy, the properties of the impurity particles in the Cu targets were characterised. It is revealed that the impurity particles in the Cu target contain 98.5% carbon, and around 75% impurity particles have a size
ISSN:1750-0443
1750-0443
DOI:10.1049/mnl.2019.0139