High-gain low-noise Ku-band mixer with inverting transconductance technique

In this study, the authors present a high-gain, low-noise Ku-band down conversion mixer in 0.18 μm complimentary metal oxide semiconductor technology. An inverting transconductance technique is adopted to obtain a high conversion gain, which uses both inverting and current bleeding effects. The nois...

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Veröffentlicht in:IET microwaves, antennas & propagation antennas & propagation, 2013-01, Vol.7 (2), p.141-145
Hauptverfasser: Lee, Ji-Young, Kang, Yun-Mo, Lee, Sang-Kon, Yun, Tae-Yeoul
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Sprache:eng
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Zusammenfassung:In this study, the authors present a high-gain, low-noise Ku-band down conversion mixer in 0.18 μm complimentary metal oxide semiconductor technology. An inverting transconductance technique is adopted to obtain a high conversion gain, which uses both inverting and current bleeding effects. The noise performance is improved by using a switched biasing technique. Current bleeding and inductor bridging techniques allow the simultaneous achievement of low noise and high conversion gain. The proposed mixer offers a measured conversion gain from 10.1 to 13.6 dB and a noise figure from 8.6 to 11.2 dB over 11 to 20 GHz and a third order input intercept point of −5 dBm at 16 GHz while consuming 8.3 mW from a 1.8 V supply voltage. The chip size, including test pads, is 0.77 × 0.75 mm2.
ISSN:1751-8725
1751-8733
1751-8733
DOI:10.1049/iet-map.2012.0482