0.5-V bulk-driven CMOS operational amplifier

A new solution for a low-voltage bulk-driven CMOS operational amplifier is presented in this study. The amplifier is designed using 50 nm process parameters and optimised for 0.5 V supply voltage. The circuit consumes 100 μW, performing 74 dB open-loop gain, 59 nV/Hz1/2 input referred noise at 1 MHz...

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Veröffentlicht in:	IET circuits, devices & systems devices & systems, 2013-11, Vol.7 (6), p.352-360
1. Verfasser:	Kulej, Tomasz
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Amplifiers Applied sciences Circuit properties Circuits CMOS CMOS integrated circuits common-mode amplifiers Design. Technologies. Operation analysis. Testing Electric potential Electric, optical and optoelectronic circuits Electrical engineering. Electrical power engineering Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gain gain 74 dB Integrated circuits low-power electronics low-voltage bulk-driven CMOS operational amplifier Noise levels noise performance Operational amplifiers power 100 muW Power electronics, power supplies Process parameters Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices size 50 nm Transistors Voltage voltage 0.5 V
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Beschreibung
Zusammenfassung:	A new solution for a low-voltage bulk-driven CMOS operational amplifier is presented in this study. The amplifier is designed using 50 nm process parameters and optimised for 0.5 V supply voltage. The circuit consumes 100 μW, performing 74 dB open-loop gain, 59 nV/Hz1/2 input referred noise at 1 MHz and 4.8 MHz gain bandwidth product (GBP) for 20 pF load capacitance.
ISSN:	1751-858X 1751-8598 1751-8598
DOI:	10.1049/iet-cds.2012.0372