Controlling fixed trap charge effect in FinFET using heterodielectric BOX

This Letter presents an Si FinFET on heterodielectric BOX, where the effect of trap charges can be avoided. The investigation is based on a 3D simulation study. The BOX height also plays a significant role in the device characteristics. The effect of trap charges using homodielectric and heterodielectric BOX is verified by plotting the electron density across a 2D cross section in the middle of the channel. The authors further investigated the effect of temperatures, ranging from room temperature to higher temperatures. The FinFET, with heterodielectric BOX, shows no trap effect even when the temperature is varied. On the other hand, a visible temperature effect is observed in case of homodielectric BOX. Moreover, in case of homodielectric BOX, the ON–OFF performance metric, (Q) is affected in presence of trap charges; whereas no change is observed when a heterodielectric BOX is used. As such, it is found that the FinFET with heterodielectric BOX is more reliable and useful for current semiconductor industries.