Low-power three-path inductor class-C VCO without any dynamic bias circuit
A 2.48 GHz class-C voltage controlled oscillator (VCO) without any dynamic back bias circuit is presented. The VCO uses three-path high Q-factor inductor as the low loss resonator and class-C cross-coupled nMOSFET pairs for high dc/RF conversion efficiency and direct cross-coupled pMOSFET for dc cur...
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Veröffentlicht in: | Electronics letters 2017-08, Vol.53 (17), p.1186-1188 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A 2.48 GHz class-C voltage controlled oscillator (VCO) without any dynamic back bias circuit is presented. The VCO uses three-path high Q-factor inductor as the low loss resonator and class-C cross-coupled nMOSFET pairs for high dc/RF conversion efficiency and direct cross-coupled pMOSFET for dc current reuse. At the supply voltage of 1.2 V, the core power consumption is 0.24 mW. The phase noise of the VCO is −124 dBc/Hz and the VCO figure of merit is −197.0 dBc/Hz. The VCO was implemented in the TSMC standard 0.18 μm SiGe BiCMOS process and occupies a die area of 0.799 × 0.809 mm2. |
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ISSN: | 0013-5194 1350-911X 1350-911X |
DOI: | 10.1049/el.2017.1845 |