Performance of standard and double-sided 3D-radiation detectors under the impact of a temperature pulse

In this Letter, a comparison of the electrical performances of a standard and a double-sided 3D-radiation detectors using TCAD simulations is performed. The transient simulation is used to investigate the charge collection performance by swamping the detector with a uniform concentration of EHPs (75 e-h pairs/µm), chosen to give the same total number of carriers as a minimum ionising particle. Both detectors can be biased with the same voltage level of the readout circuitry in the standard 0.35 µm BiCMOS technology, but the standard full 3D structure is preferred for its high collection charge which means high signal to noise ratio. Finally, the impact of a temperature (300−400 K) pulse with fast transition times is studied. The impact has no significant effect on the collection current waveform of the standard but it has a big influence of the current waveform of the double-sided 3D-detectors. This makes the standard 3D-detector favourable than the double-sided 3D-detector in a harsh environment.