High peak power pulses from dispersion optimised modelocked semiconductor laser

Presented is an electrically pumped passively modelocked edge-emitting semiconductor laser system in an external cavity setup with intracavity dispersion management. This concept, in combination with a pulse compressor, provides pulses as short as 158 fs. By expanding the setup with a tapered diode...

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Veröffentlicht in:	Electronics letters 2013-06, Vol.49 (13), p.838-839
Hauptverfasser:	Balzer, J.C, Schlauch, T, Klehr, A, Erbert, G, Tränkle, G, Hofmann, M.R
Format:	Artikel
Sprache:	eng
Schlagworte:	dispersion optimized mode‐locked semiconductor laser electrically pumped passively mode‐locked edge‐emitting semiconductor laser Exact sciences and technology external cavity setup Fiber lasers Fundamental areas of phenomenology (including applications) high peak power laser pulses high‐speed optical techniques IDM intracavity dispersion management laser cavity resonators laser mode locking Lasers optical dispersion optical pulse compression optical pumping Optics Photonics Physics power 6.5 kW pulse compressor semiconductor lasers Semiconductor lasers laser diodes tapered diode laser amplifier wavelength 850 nm
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Beschreibung
Zusammenfassung:	Presented is an electrically pumped passively modelocked edge-emitting semiconductor laser system in an external cavity setup with intracavity dispersion management. This concept, in combination with a pulse compressor, provides pulses as short as 158 fs. By expanding the setup with a tapered diode laser amplifier, peak powers up to 6.5 kW were achieved in the 850 nm wavelength range.
ISSN:	0013-5194 1350-911X 1350-911X
DOI:	10.1049/el.2013.1447