3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration

A 3–10 GHz self-biased low-noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input-matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The...

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Veröffentlicht in:	Electronics letters 2013-03, Vol.49 (6), p.387-388
Hauptverfasser:	Feng, C, Yu, X. P, Lu, Z. H, Lim, W. M, Sui, W. Q
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Circuit properties Circuits and systems CMOS analogue integrated circuits current current 12 mA Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology feedback amplifiers frequency frequency 3 GHz to 10 GHz Global Foundries CMOS process inductive source degeneration technique input‐matching network low noise amplifiers low‐noise amplifier microwave amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits microwave integrated circuits noise figure noise figure 3.5 dB to 4.3 dB resistive feedback self‐biased resistive‐feedback LNA size size 65 nm voltage voltage 1.2 V wideband amplifiers wideband matching
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