3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration

3–10 GHz self-biased resistive-feedback LNA with inductive source degeneration

A 3–10 GHz self-biased low-noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input-matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The...

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Veröffentlicht in:Electronics letters 2013-03, Vol.49 (6), p.387-388
Hauptverfasser: Feng, C, Yu, X. P, Lu, Z. H, Lim, W. M, Sui, W. Q
Format: Artikel
Sprache:eng
Schlagworte:
Amplifiers
Applied sciences
Circuit properties
Circuits and systems
CMOS analogue integrated circuits
current
current 12 mA
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
feedback amplifiers
frequency
frequency 3 GHz to 10 GHz
Global Foundries CMOS process
inductive source degeneration technique
input‐matching network
low noise amplifiers
low‐noise amplifier
microwave amplifiers
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
microwave integrated circuits
noise figure
noise figure 3.5 dB to 4.3 dB
resistive feedback
self‐biased resistive‐feedback LNA
size
size 65 nm
voltage
voltage 1.2 V
wideband amplifiers
wideband matching
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Beschreibung
Zusammenfassung:A 3–10 GHz self-biased low-noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input-matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The LNA exhibits a power gain of 17 ± 1 dB over 3–10 GHz with noise figure ranging from 3.5 to 4.3 dB. The fabricated LNA occupies an area of 0.15 mm2 and draws 12 mA from 1.2 V power supply.
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2012.4472