Electrostatics of JFET at 6 nm channel length: a simulation study

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Veröffentlicht in:	Electronics letters 2011-07, Vol.47 (15), p.870-871
1. Verfasser:	KAPOOR, A. K
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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source	Alma/SFX Local Collection
subjects	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
title	Electrostatics of JFET at 6 nm channel length: a simulation study
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