Light emitting diodes based on GaN core/ shell wires grown by MOVPE on n-type Si substrate
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| Veröffentlicht in: | Electronics letters 2011-06, Vol.47 (13), p.765-767 |
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| container_end_page | 767 |
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| container_issue | 13 |
| container_start_page | 765 |
| container_title | Electronics letters |
| container_volume | 47 |
| creator | BAVENCOVE, A.-L SALOMON, D LE SI DANG GILET, P LAFOSSAS, M MARTIN, B DUSSAIGNE, A LEVY, F ANDRE, B FERRET, P DURAND, C EYMERY, J |
| description | |
| doi_str_mv | 10.1049/el.2011.1242 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2011-06, Vol.47 (13), p.765-767 |
| issn | 0013-5194 1350-911X |
| language | eng |
| recordid | cdi_crossref_primary_10_1049_el_2011_1242 |
| source | Alma/SFX Local Collection |
| subjects | Applied sciences Compound structure devices Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Light emitting diodes based on GaN core/ shell wires grown by MOVPE on n-type Si substrate |
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