High performance 0.25 µm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz
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| Veröffentlicht in: | Electronics letters 2003-10, Vol.39 (22), p.1609-1611 |
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| Sprache: | eng |
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| container_end_page | 1611 |
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| container_issue | 22 |
| container_start_page | 1609 |
| container_title | Electronics letters |
| container_volume | 39 |
| creator | Kumar, V. Lee, J.-W. Kuliev, A. Aktas, O. Schwindt, R. Birkhahn, R. Gotthold, D. Guo, S. Albert, B. Adesida, I. |
| description | |
| doi_str_mv | 10.1049/el:20030985 |
| format | Article |
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| fulltext | no_fulltext |
| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2003-10, Vol.39 (22), p.1609-1611 |
| issn | 0013-5194 1350-911X |
| language | eng |
| recordid | cdi_crossref_primary_10_1049_el_20030985 |
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| title | High performance 0.25 µm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz |
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