Static frequency divider circuit using 0.15 µm gate length Si 0.2 Ge 0.8 /Si 0.7 Ge 0.3 p -MODFETs
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| Veröffentlicht in: | Electronics letters 2003-03, Vol.39 (6), p.570-572 |
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| container_end_page | 572 |
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| container_issue | 6 |
| container_start_page | 570 |
| container_title | Electronics letters |
| container_volume | 39 |
| creator | Singh, D.V. Koester, S.J. Chu, J.O. Jenkins, K.A. Mooney, P.M. Ouyang, Q.C. Ruiz, N. Ott, J.A. Ralston, D. Wetzel, M. Asbeck, P.M. Saenger, K.L. Patel, V.V. Grill, A. |
| description | |
| doi_str_mv | 10.1049/el:20030353 |
| format | Article |
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| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2003-03, Vol.39 (6), p.570-572 |
| issn | 0013-5194 1350-911X |
| language | eng |
| recordid | cdi_crossref_primary_10_1049_el_20030353 |
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| title | Static frequency divider circuit using 0.15 µm gate length Si 0.2 Ge 0.8 /Si 0.7 Ge 0.3 p -MODFETs |
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