A new approach to free-standing GaN using β-Ga2O3 as a substrate

Hexagonal GaN (0001) has been grown by a pseudo-HVPE method on β-Ga 2 O 3 (100) using an intermediate low-temperature buffer layer formed by in situ NH 3 treatment of β-Ga 2 O 3 substrate. A simple method for self-separation of bulk GaN from the β-Ga 2 O 3 substrate is reported. The structural properties of the GaN and GaN-β-Ga 2 O 3 interface were investigated by high-resolution X-ray diffraction and electron microscopy techniques. GaN layers were deposited on β-Ga 2 O 3 by using gallium cyanide as a transport agent for gallium and, NH 3 as a source of nitrogen. The properties of these layers are compared with those of samples grown on sapphire. Hexagonal GaN was grown on β-Ga 2 O 3 using a low-temperature buffer layer, leading to self-separation of bulk GaN from the substrate.