Non-volatile transistor memory fabricated using DNA and eliminating influence of mobile ions on electric properties

Non-volatile transistor memory fabricated using DNA and eliminating influence of mobile ions on electric properties

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Veröffentlicht in:Journal of materials chemistry 2011-01, Vol.21 (39), p.15575
Hauptverfasser: Yukimoto, Tomoyoshi, Uemura, Sei, Kamata, Toshihide, Nakamura, Kazuki, Kobayashi, Norihisa
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container_end_page
container_issue 39
container_start_page 15575
container_title Journal of materials chemistry
container_volume 21
creator Yukimoto, Tomoyoshi
Uemura, Sei
Kamata, Toshihide
Nakamura, Kazuki
Kobayashi, Norihisa
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doi_str_mv 10.1039/c1jm12229k
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title Non-volatile transistor memory fabricated using DNA and eliminating influence of mobile ions on electric properties
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