Stabilizing cubic γ-Ga 2 O 3 :Cr 3+ spinel nanocrystals by size confinement into mesoporous silica nanoreactor channels

In recent years, Cr 3+ -activated phosphors have been attracting a lot of interest due to their unique optical features that can be exploited for applications ranging from lasers to optical thermometry, near-infrared (NIR) emitting phosphors for bioimaging and NIR-LEDs, to name a few. Despite the in...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-07, Vol.12 (29), p.10929-10941
Hauptverfasser: Crozzolin, Michele, Belloni, Camilla, Xu, Jian, Nakanishi, Takayuki, Ueda, Jumpei, Tanabe, Setsuhisa, Dallo, Federico, Balliana, Eleonora, Saorin, Asia, Rizzolio, Flavio, Cristofori, Davide, Riello, Pietro, Benedetti, Alvise, Back, Michele
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Sprache:eng
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Zusammenfassung:In recent years, Cr 3+ -activated phosphors have been attracting a lot of interest due to their unique optical features that can be exploited for applications ranging from lasers to optical thermometry, near-infrared (NIR) emitting phosphors for bioimaging and NIR-LEDs, to name a few. Despite the interesting optical properties shown by Cr 3+ -doped Ga 2 O 3 , investigations are limited only to β-Ga 2 O 3 and α-Ga 2 O 3 polymorphs. Using mesoporous silica particles with different pore sizes between 3 nm and 22 nm as nanoreactors, cubic γ-Ga 2 O 3 :Cr 3+ spinel nanocrystals (NCs) are stabilized through confinement into the mesopores as confirmed by HR-TEM, XRPD and the photoluminescence spectral shape. A detailed spectroscopic investigation in the temperature range between 16 to 500 K allowed extrapolating the fundamental parameters in the framework of the Tanabe–Sugano diagram and comparing the values for Cr 3+ in γ-Ga 2 O 3 with the α- and β-phases. In addition, due to the confinement of the NCs into the silica structure, the phase transition to the β-phase, conventionally occurring at about 700 °C, is hindered up to 1000 °C, improving the stability of the γ-Ga 2 O 3 phase.
ISSN:2050-7526
2050-7534
DOI:10.1039/D4TC01386G