A highly selective and high-performance sulfonated poly(ether ether ketone)-based hybrid membrane enabled by complexed UiO-66-NH 2 and sulfonated graphitic carbon nitride for vanadium flow batteries
A series of sulfonated poly(ether ether ketone) (SPEEK) hybrid membranes (SPEEK/NF) with constant 1 wt% complexed nanofillers (NF) comprising UiO-66-NH 2 and sulfonated graphitic carbon nitride (s-g-C 3 N 4 ) are prepared through the solution-blending method. As the ratio of UiO-66-NH 2 /s-g-C 3 N 4...
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Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2024-05, Vol.12 (21), p.12876-12888 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A series of sulfonated poly(ether ether ketone) (SPEEK) hybrid membranes (SPEEK/NF) with constant 1 wt% complexed nanofillers (NF) comprising UiO-66-NH
2
and sulfonated graphitic carbon nitride (s-g-C
3
N
4
) are prepared through the solution-blending method. As the ratio of UiO-66-NH
2
/s-g-C
3
N
4
amounts to 1 : 1, the SPEEK/NF-1 : 1 membrane shows the highest ion selectivity (111.3 × 10
3
S min cm
−3
) and the lowest vanadium ion permeability (2.5 × 10
−7
cm
2
min
−1
). In the meantime, it further presents outstanding energy efficiency (85.9–76.1%) and ultra-long self-discharge time (136.1 h) at a current density of 100–200 mA cm
−2
. The acid–base interaction originating from the –NH
2
and –SO
3
H groups in the SPEEK/NF hybrid membranes provides a stable protonation network, and the synergistic ion screening ability and physical blocking effect from UiO-66-NH
2
and s-g-C
3
N
4
maintain 79.9% energy efficiency, 0.29% capacity decay rate per cycle and good chemical stability for SPEEK/NF-1 : 1. Thus, the manipulation of acid–base interaction and synergistic ion barriers enabled by two-dimensional nanostructured materials allow us to explore highly selective SPEEK/NF hybrid membranes, showing great prospects in VFB applications. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/D4TA00988F |