Potential application of ternary pentagonal p-SiXY 4 (X = Si, C, Ge; Y = C, B, N) materials for optoelectronics and photocatalytic water splitting: a first-principles study
Recently, two-dimensional (2D) materials with a pentagonal structure have attracted great interest since the discovery of penta-graphene, due to their unique structures and remarkable physical properties. In this work, the geometric structure, stability, electronic and optical properties and photoca...
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Veröffentlicht in: | Sustainable energy & fuels 2024-03, Vol.8 (6), p.1346-1357 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Recently, two-dimensional (2D) materials with a pentagonal structure have attracted great interest since the discovery of penta-graphene, due to their unique structures and remarkable physical properties. In this work, the geometric structure, stability, electronic and optical properties and photocatalytic performances of p-SiXY
4
(X = Si, C, Ge; Y = C, B, N) pentagonal materials were systematically examined using first-principles calculations. By assessing the stability, we have found that six of the nine studied p-SiXY
4
2D materials have excellent energetic, dynamic, and thermal stability. Electronic structures reveal that these six monolayers have a semiconductor state, with indirect band gaps ranging from 1.39 to 5.45 eV depending on the functional used, which covers the visible-ultraviolet regions. Furthermore, the band edge positions of these pentagonal monolayers perfectly meet the redox potentials for photocatalytic water splitting. The calculated optical absorption showed that p-Si
2
N
4
, p-SiCN
4
and p-SiGeN
4
monolayers exhibit substantial optical absorption in the ultraviolet (UV) range, whereas p-Si
2
C
4
, p-SiGeC
4
, and p-SiCC
4
monolayers show a very high optical absorption in the visible and ultraviolet regions (up to 10
−5
cm
−1
). Our finding provides a route to design new Si-based 2D pentagonal materials with excellent application prospects such as in photocatalytic water splitting and optoelectronics. |
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ISSN: | 2398-4902 2398-4902 |
DOI: | 10.1039/D4SE00001C |