High proficiency Ag/β-Ag 2 WO 4 /V 3 O 4 /g-C 3 N 4 heterojunction photocatalyst for the actuation of C(OH)–H bond

One of the important procedures to enhance the activity of semiconductors as a catalyst is the fabrication of Ag-based semiconductors with a large bandgap energy. Here, a novel Ag/β-Ag 2 WO 4 /V 3 O 4 /g-C 3 N 4 heterojunction photocatalyst was synthesized by a solvothermal method. The heterojunctio...

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Veröffentlicht in:New journal of chemistry 2024-04, Vol.48 (16), p.7430-7438
Hauptverfasser: Zolfi, Fereshteh, Ghobadifard, Mahdieh, Mohebbi, Sajjad
Format: Artikel
Sprache:eng
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Zusammenfassung:One of the important procedures to enhance the activity of semiconductors as a catalyst is the fabrication of Ag-based semiconductors with a large bandgap energy. Here, a novel Ag/β-Ag 2 WO 4 /V 3 O 4 /g-C 3 N 4 heterojunction photocatalyst was synthesized by a solvothermal method. The heterojunction structure was characterized by FT-IR spectroscopy, DRS, FE-SEM, XRD, PL, and EDS techniques. The photo-ability of V 3 O 4 , V 3 O 4 /g-C 3 N 4 , and Ag/β-Ag 2 WO 4 /V 3 O 4 /g-C 3 N 4 toward the actuation of C(OH)–H bond was investigated using a visible lamp. The prepared photocatalyst illustrated impressive activity compared to pure V 3 O 4 and V 3 O 4 /g-C 3 N 4 , which was 67% under aerobic environments due to the considerable separation of the photogenerated charge pairs and enhanced active sites after the incorporation of nanoparticles. Accordingly, this catalyst should be introduced as a qualified photocatalyst, because of its activity, selectivity, and stability.
ISSN:1144-0546
1369-9261
DOI:10.1039/D4NJ00395K