Advanced HIL strategies in QLEDs: V 2 O 5 and PEDOT:PSS dual-layer for charge balance and electron leakage prevention
Quantum dot light emitting devices (QLEDs) show promise for displays, with polyethylenedioxythiophene:polystyrene (PEDOT:PSS) commonly used as a hole injection layer (HIL) due to its high conductivity and work function. However, PEDOT:PSS-based QLEDs face an energy barrier, reducing efficiency. Here...
Gespeichert in:
Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-02, Vol.12 (9), p.3196-3202 |
---|---|
Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 3202 |
---|---|
container_issue | 9 |
container_start_page | 3196 |
container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
container_volume | 12 |
creator | Bin Cho, Han Kim, Ha Jun Viswanath, Noolu Srinivasa Manikanta Samanta, Tuhin Min, Jeong Wan Jang, Sung Woo Park, Yong Min Jang, Se Hyuk Yang, Heesun Im, Won Bin |
description | Quantum dot light emitting devices (QLEDs) show promise for displays, with polyethylenedioxythiophene:polystyrene (PEDOT:PSS) commonly used as a hole injection layer (HIL) due to its high conductivity and work function. However, PEDOT:PSS-based QLEDs face an energy barrier, reducing efficiency. Herein, in this work, we used the rapid thermal annealing (RTA) process to improve the conductivity by controlling the RTA processing time which reduced the interfacial resistance. This improves charge balance and long-term stability by preventing electron leakage. The optimized V
2
O
5
/PEDOT:PSS-based QLED, with an EQE of 18%, CE of 77 cd A
−1
and maximum luminance of 23 242 cd m
−2
, outperforms the PEDOT:PSS-based counterpart. This highlights the strategic superiority of V
2
O
5
HIL in our QLED. |
doi_str_mv | 10.1039/D3TC04652D |
format | Article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1039_D3TC04652D</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1039_D3TC04652D</sourcerecordid><originalsourceid>FETCH-crossref_primary_10_1039_D3TC04652D3</originalsourceid><addsrcrecordid>eNqVj0uLwkAQhAdZQVm9-Av6vBCdJCY-bmIiCoKKwWtok47GHSfSEwX_vQ9Ez9alCuqjoIRo2bJtS3fQCdxoLLu-5wQVUXekJ62e53Z_3tnxa6JpzEHe1bf9vj-oi_MovaBOKIXpbA6mZCxpl5OBXMNqHgZmCBtwYAEeoE5hGQaLaLhcryE9o7IUXokhKxiSPfKOYIvqsfZkSVFScqFBEf7jvTwxXUiXeaEbopqhMtR8-a_4m4TReGolXBjDlMUnzo_I19iW8eNb_PnmfgXfAEvdUpU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Advanced HIL strategies in QLEDs: V 2 O 5 and PEDOT:PSS dual-layer for charge balance and electron leakage prevention</title><source>Royal Society Of Chemistry Journals 2008-</source><creator>Bin Cho, Han ; Kim, Ha Jun ; Viswanath, Noolu Srinivasa Manikanta ; Samanta, Tuhin ; Min, Jeong Wan ; Jang, Sung Woo ; Park, Yong Min ; Jang, Se Hyuk ; Yang, Heesun ; Im, Won Bin</creator><creatorcontrib>Bin Cho, Han ; Kim, Ha Jun ; Viswanath, Noolu Srinivasa Manikanta ; Samanta, Tuhin ; Min, Jeong Wan ; Jang, Sung Woo ; Park, Yong Min ; Jang, Se Hyuk ; Yang, Heesun ; Im, Won Bin</creatorcontrib><description>Quantum dot light emitting devices (QLEDs) show promise for displays, with polyethylenedioxythiophene:polystyrene (PEDOT:PSS) commonly used as a hole injection layer (HIL) due to its high conductivity and work function. However, PEDOT:PSS-based QLEDs face an energy barrier, reducing efficiency. Herein, in this work, we used the rapid thermal annealing (RTA) process to improve the conductivity by controlling the RTA processing time which reduced the interfacial resistance. This improves charge balance and long-term stability by preventing electron leakage. The optimized V
2
O
5
/PEDOT:PSS-based QLED, with an EQE of 18%, CE of 77 cd A
−1
and maximum luminance of 23 242 cd m
−2
, outperforms the PEDOT:PSS-based counterpart. This highlights the strategic superiority of V
2
O
5
HIL in our QLED.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/D3TC04652D</identifier><language>eng</language><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-02, Vol.12 (9), p.3196-3202</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-crossref_primary_10_1039_D3TC04652D3</cites><orcidid>0000-0002-2827-2070 ; 0000-0003-2473-4714</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Bin Cho, Han</creatorcontrib><creatorcontrib>Kim, Ha Jun</creatorcontrib><creatorcontrib>Viswanath, Noolu Srinivasa Manikanta</creatorcontrib><creatorcontrib>Samanta, Tuhin</creatorcontrib><creatorcontrib>Min, Jeong Wan</creatorcontrib><creatorcontrib>Jang, Sung Woo</creatorcontrib><creatorcontrib>Park, Yong Min</creatorcontrib><creatorcontrib>Jang, Se Hyuk</creatorcontrib><creatorcontrib>Yang, Heesun</creatorcontrib><creatorcontrib>Im, Won Bin</creatorcontrib><title>Advanced HIL strategies in QLEDs: V 2 O 5 and PEDOT:PSS dual-layer for charge balance and electron leakage prevention</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>Quantum dot light emitting devices (QLEDs) show promise for displays, with polyethylenedioxythiophene:polystyrene (PEDOT:PSS) commonly used as a hole injection layer (HIL) due to its high conductivity and work function. However, PEDOT:PSS-based QLEDs face an energy barrier, reducing efficiency. Herein, in this work, we used the rapid thermal annealing (RTA) process to improve the conductivity by controlling the RTA processing time which reduced the interfacial resistance. This improves charge balance and long-term stability by preventing electron leakage. The optimized V
2
O
5
/PEDOT:PSS-based QLED, with an EQE of 18%, CE of 77 cd A
−1
and maximum luminance of 23 242 cd m
−2
, outperforms the PEDOT:PSS-based counterpart. This highlights the strategic superiority of V
2
O
5
HIL in our QLED.</description><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNqVj0uLwkAQhAdZQVm9-Av6vBCdJCY-bmIiCoKKwWtok47GHSfSEwX_vQ9Ez9alCuqjoIRo2bJtS3fQCdxoLLu-5wQVUXekJ62e53Z_3tnxa6JpzEHe1bf9vj-oi_MovaBOKIXpbA6mZCxpl5OBXMNqHgZmCBtwYAEeoE5hGQaLaLhcryE9o7IUXokhKxiSPfKOYIvqsfZkSVFScqFBEf7jvTwxXUiXeaEbopqhMtR8-a_4m4TReGolXBjDlMUnzo_I19iW8eNb_PnmfgXfAEvdUpU</recordid><startdate>20240229</startdate><enddate>20240229</enddate><creator>Bin Cho, Han</creator><creator>Kim, Ha Jun</creator><creator>Viswanath, Noolu Srinivasa Manikanta</creator><creator>Samanta, Tuhin</creator><creator>Min, Jeong Wan</creator><creator>Jang, Sung Woo</creator><creator>Park, Yong Min</creator><creator>Jang, Se Hyuk</creator><creator>Yang, Heesun</creator><creator>Im, Won Bin</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-2827-2070</orcidid><orcidid>https://orcid.org/0000-0003-2473-4714</orcidid></search><sort><creationdate>20240229</creationdate><title>Advanced HIL strategies in QLEDs: V 2 O 5 and PEDOT:PSS dual-layer for charge balance and electron leakage prevention</title><author>Bin Cho, Han ; Kim, Ha Jun ; Viswanath, Noolu Srinivasa Manikanta ; Samanta, Tuhin ; Min, Jeong Wan ; Jang, Sung Woo ; Park, Yong Min ; Jang, Se Hyuk ; Yang, Heesun ; Im, Won Bin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-crossref_primary_10_1039_D3TC04652D3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bin Cho, Han</creatorcontrib><creatorcontrib>Kim, Ha Jun</creatorcontrib><creatorcontrib>Viswanath, Noolu Srinivasa Manikanta</creatorcontrib><creatorcontrib>Samanta, Tuhin</creatorcontrib><creatorcontrib>Min, Jeong Wan</creatorcontrib><creatorcontrib>Jang, Sung Woo</creatorcontrib><creatorcontrib>Park, Yong Min</creatorcontrib><creatorcontrib>Jang, Se Hyuk</creatorcontrib><creatorcontrib>Yang, Heesun</creatorcontrib><creatorcontrib>Im, Won Bin</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bin Cho, Han</au><au>Kim, Ha Jun</au><au>Viswanath, Noolu Srinivasa Manikanta</au><au>Samanta, Tuhin</au><au>Min, Jeong Wan</au><au>Jang, Sung Woo</au><au>Park, Yong Min</au><au>Jang, Se Hyuk</au><au>Yang, Heesun</au><au>Im, Won Bin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Advanced HIL strategies in QLEDs: V 2 O 5 and PEDOT:PSS dual-layer for charge balance and electron leakage prevention</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2024-02-29</date><risdate>2024</risdate><volume>12</volume><issue>9</issue><spage>3196</spage><epage>3202</epage><pages>3196-3202</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>Quantum dot light emitting devices (QLEDs) show promise for displays, with polyethylenedioxythiophene:polystyrene (PEDOT:PSS) commonly used as a hole injection layer (HIL) due to its high conductivity and work function. However, PEDOT:PSS-based QLEDs face an energy barrier, reducing efficiency. Herein, in this work, we used the rapid thermal annealing (RTA) process to improve the conductivity by controlling the RTA processing time which reduced the interfacial resistance. This improves charge balance and long-term stability by preventing electron leakage. The optimized V
2
O
5
/PEDOT:PSS-based QLED, with an EQE of 18%, CE of 77 cd A
−1
and maximum luminance of 23 242 cd m
−2
, outperforms the PEDOT:PSS-based counterpart. This highlights the strategic superiority of V
2
O
5
HIL in our QLED.</abstract><doi>10.1039/D3TC04652D</doi><orcidid>https://orcid.org/0000-0002-2827-2070</orcidid><orcidid>https://orcid.org/0000-0003-2473-4714</orcidid></addata></record> |
fulltext | fulltext |
identifier | ISSN: 2050-7526 |
ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-02, Vol.12 (9), p.3196-3202 |
issn | 2050-7526 2050-7534 |
language | eng |
recordid | cdi_crossref_primary_10_1039_D3TC04652D |
source | Royal Society Of Chemistry Journals 2008- |
title | Advanced HIL strategies in QLEDs: V 2 O 5 and PEDOT:PSS dual-layer for charge balance and electron leakage prevention |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T11%3A37%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Advanced%20HIL%20strategies%20in%20QLEDs:%20V%202%20O%205%20and%20PEDOT:PSS%20dual-layer%20for%20charge%20balance%20and%20electron%20leakage%20prevention&rft.jtitle=Journal%20of%20materials%20chemistry.%20C,%20Materials%20for%20optical%20and%20electronic%20devices&rft.au=Bin%20Cho,%20Han&rft.date=2024-02-29&rft.volume=12&rft.issue=9&rft.spage=3196&rft.epage=3202&rft.pages=3196-3202&rft.issn=2050-7526&rft.eissn=2050-7534&rft_id=info:doi/10.1039/D3TC04652D&rft_dat=%3Ccrossref%3E10_1039_D3TC04652D%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |