Realization of temperature-insensitive energy band-gap based on nanowire-well quantum systems for thermally frequency-stable laser diodes
The realization of high-power and thermally frequency-stable laser diodes is always highly desirable and also a difficulty in the areas of laser diodes and their applications. One of the major factors causing a shift in lasing frequency is the temperature dependence of the band-gap of the active med...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-05, Vol.12 (17), p.6161-6169 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The realization of high-power and thermally frequency-stable laser diodes is always highly desirable and also a difficulty in the areas of laser diodes and their applications. One of the major factors causing a shift in lasing frequency is the temperature dependence of the band-gap of the active medium, which leads to the photon energy changing. In this paper, we propose a novel approach and mechanism to overcome the variation in band-gap with temperature. This is the utilization of a nanowire constraint on the well in a self-organized InGaAs nanowire-well-bound quantum system. By binding relatively heat-stable nanowires directly to the well in this system, the thermal change in the energy-band of the hybrid quantum system is effectively restricted. As a result, the band-gap variations are limited to |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/d3tc04371a |