Template-free scalable growth of vertically-aligned MoS 2 nanowire array meta -structural films towards robust superlubricity
Two-dimensional (2D) molybdenum disulfide exhibits a variety of intriguing behaviors depending on its orientation layers. Therefore, developing a template-free atomic layer orientation controllable growth approach is of great importance. Here, we demonstrate scalable, template-free, well-ordered ver...
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Veröffentlicht in: | Materials horizons 2023-10, Vol.10 (10), p.4148-4162 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Two-dimensional (2D) molybdenum disulfide exhibits a variety of intriguing behaviors depending on its orientation layers. Therefore, developing a template-free atomic layer orientation controllable growth approach is of great importance. Here, we demonstrate scalable, template-free, well-ordered vertically-oriented MoS
nanowire arrays (VO-MoS
NWAs) embedded in an Ag-MoS
matrix, directly grown on various substrates (Si, Al, and stainless steel)
one-step sputtering. In the
-structured film, vertically-standing few-layered MoS
NWAs of almost micron length (∼720 nm) throughout the entire film bulk. While near the surface, MoS
lamellae are oriented in parallel, which are beneficial for caging the bonds dangling from the basal planes. Owing to the unique T-type topological characteristics, chemically inert Ag@MoS
nano-scrolls (NSCs) and nano-crystalline Ag (nc-Ag) nanoparticles (NPs) are
formed under the sliding shear force. Thus, incommensurate contact between (002) basal planes and nc-Ag NPs is observed. As a result, robust superlubricity (friction coefficient
= 0.0039) under humid ambient conditions is reached. This study offers an unprecedented strategy for controlling the basal plane orientation of 2D transition metal dichalcogenides (TMDCs)
substrate independence, using a one-step solution-free easily scalable process without the need for a template, which promotes the potential applications of 2D TMDCs in solid superlubricity. |
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ISSN: | 2051-6347 2051-6355 |
DOI: | 10.1039/d3mh00677h |