A pressure-induced superhard SiCN 4 compound uncovered by first-principles calculations

Silicon-carbon-nitride (Si-C-N) compounds are a family of potential superhard materials with many excellent chemical and physical properties; however, only SiCN, Si CN and SiC N were synthesized. Here, we theoretically report a new SiCN compound with 4 2 2, 2 and 3̄ structures by first-principles structural predictions based on the particle swarm optimization algorithm. Pressure-induced structural phase transitions from 4 2 2 to 2, and then to the 3̄ phase were determined at 2 GPa and 249 GPa. By comparing enthalpy differences with 1/3Si N + C + 4/3N , it was found that these structures tend to decompose at ambient pressure. However, with the increase of pressure, the enthalpy differences of 2 and 3̄ structures turn to be negative and they can be stabilized at a pressure of more than 41 GPa. They are also dynamically stable as no imaginary frequencies were found in their stabilized pressure ranges. The calculated band gap is 4.37 eV for 4 2 2, 3.72 eV for 2 and 3.81 eV for the 3̄ phase by using the Heyd-Scuseria-Ernzerhof (HSE06) method and the estimated Vickers hardness values are higher than 40 GPa by adopting the elastic modulus based hardness formula, which confirmed their superhard characteristics. These results provide significant insights into Si-C-N systems and will inevitably promote the future experimental works.