Solution-grown millimeter-scale Mn-doped CsPbBr 3 /Cs 4 PbBr 6 crystals with enhanced photoluminescence and stability for light-emitting applications
Metal halide perovskites are particularly emerging for optoelectronic applications in light-emitting diodes, photodetectors, and solar cells due to their flourishing photophysical properties. However, the poor stability of three-dimensional (3D) lead halide perovskite nanocrystals (NCs) significantl...
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Veröffentlicht in: | Physical chemistry chemical physics : PCCP 2023-12, Vol.26 (1), p.373-380 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Metal halide perovskites are particularly emerging for optoelectronic applications in light-emitting diodes, photodetectors, and solar cells due to their flourishing photophysical properties. However, the poor stability of three-dimensional (3D) lead halide perovskite nanocrystals (NCs) significantly hampers their optoelectronics and photovoltaics applications. Embedding 3D perovskites into zero-dimensional (0D) perovskite crystals and doping ions of appropriate elements into host lattices provide effective approaches to improve the stability and optical-electronic performance. In this study, millimeter-scale Mn-doped and undoped CsPbBr
/Cs
PbBr
perovskite crystals were successfully fabricated by a one-step slow cooling method. We systematically investigated the effects of Mn
ion doping on the PL performance and stability of CsPbBr
/Cs
PbBr
crystals. Compared with undoped crystals, the existence of Mn
ions not only blue-shifted the PL peak but also improved the luminescence performance and stability of the prepared millimeter-sized crystals. Moreover, doping Mn
ions can increase the proportion of radiative recombination at low temperature, which may be because Mn
ions can effectively accelerate the decay of a dark exciton by the magnetic mixing of bright and dark excitons. In addition, green LED devices with high efficiency packaged as-grown crystals are explored, which promises further application in display backlights. |
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ISSN: | 1463-9076 1463-9084 |
DOI: | 10.1039/d3cp04371a |