Effect of high-temperature remelting on the properties of Sn-doped β-Ga 2 O 3 crystal grown using the EFG method
To increase the n-type conductivity of single-crystal substrates, the Sn element was purposefully inserted into β-Ga 2 O 3 crystals as n-type dopants. However, it was found that the color of the β-Ga 2 O 3 crystal changed significantly after high-temperature remelting in the edge-defined film-fed gr...
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Veröffentlicht in: | CrystEngComm 2023-07, Vol.25 (30), p.4317-4324 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | To increase the n-type conductivity of single-crystal substrates, the Sn element was purposefully inserted into β-Ga
2
O
3
crystals as n-type dopants. However, it was found that the color of the β-Ga
2
O
3
crystal changed significantly after high-temperature remelting in the edge-defined film-fed growth (EFG) method. According to Hall and optical transmission spectroscopy, the carrier concentration in the colorless region is significantly lower than that in the blue region, resulting in a decrease in electrical conductivity after high-temperature remelting of Sn-doped β-Ga
2
O
3
. This is a challenge for the application of β-Ga
2
O
3
as an electronic power device. Therefore, we focused on the impact of the two color boundary areas on the structure, electronic, optical properties, and (100) surface defects after high-temperature remelting, and discussed the reason for this color change. Inductive coupled plasma emission spectroscopy (ICP) was used to detect the content of Sn. According to the results of high-resolution X-ray diffraction and atomic force microscopy, compared with the low crystal in the colorless area, the single crystal in the blue area showed higher crystal quality. The PL results indicate that the colorless area has more defects caused by oxygen vacancies than the blue area. |
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ISSN: | 1466-8033 1466-8033 |
DOI: | 10.1039/D3CE00415E |