Adaptive wind-evoked power devices for autonomous motor control applications

With the explosive development of artificial intelligence, power devices integrated with real-time sensing functions have attracted tremendous attention and will play an important role in intelligent control applications. In this work, a cantilever-structured AlGaN/AlN/GaN high electron mobility transistor integrated with ultrahigh sensitivity and large output power modulation is fabricated through a low-damage anisotropic and isotropic etching process, and achieves excellent electrical performance with a maximal output current of 236 mA mm 1 at a gate bias of 1 V. Due to the facile structure of the cantilever, the device is capable of sensing external stimuli, e.g. , gentle wind, and in turn controlling the power output. Significantly, the device exhibits an extraordinarily large output power modulation ( P : 1.68 10 3 W cm 2 ) under external stimuli in the saturation region, and obtains an ultrahigh strain sensitivity (gauge factor: 1472) under gate voltage in the linear region. Moreover, the wind-evoked mutational behavior of crickets is emulated by the device to demonstrate the capability of autonomous motor control. Such wind-evoked power devices ingeniously coupled with the dynamic piezotronic effect will have great significance in real-time sensing and actuation applications in artificial intelligence, autonomous driving, and aerospace. Wind-evoked power devices based on cantilever-structured GaN HEMTs are demonstrated with large output power modulation of 1.68 10 3 W cm 2 and ultrahigh strain sensitivity of 1472, showing great potential in autonomous motor control applications.