Gd 3+ and Bi 3+ co-substituted cubic zirconia; (Zr 1- x - y Gd x Bi y O 2- δ ): a novel high κ relaxor dielectric and superior oxide-ion conductor

Solid oxide fuel cells (SOFCs) offer several advantages over lower temperature polymeric membrane fuels cells (PMFCs) due to their multiple fuel flexibility and requirement of low purity hydrogen. In order to decrease the operating temperature of SOFCs and to overcome the high operating cost and mat...

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Veröffentlicht in:RSC advances 2022-05, Vol.12 (23), p.14551-14561
Hauptverfasser: Yadav, Akanksha, Prakash, Rajiv, Singh, Preetam
Format: Artikel
Sprache:eng
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Zusammenfassung:Solid oxide fuel cells (SOFCs) offer several advantages over lower temperature polymeric membrane fuels cells (PMFCs) due to their multiple fuel flexibility and requirement of low purity hydrogen. In order to decrease the operating temperature of SOFCs and to overcome the high operating cost and materials degradation challenges, the Cubic phase of ZrO was stabilized with simultaneous substitution of Bi and Gd and the effect of co-doping on the oxide-ion conductivity of Zr Bi Gd O was studied to develop a superior electrolyte separator for SOFCs. Up to 30% Gd and 20% Bi were simultaneously substituted in the cubic ZrO lattice (Zr Gd Bi O , + ≤ 0.4, ≤ 0.3 and ≤ 0.2) by employing a solution combustion method followed by multiple calcinations at 900 °C. Phase purity and composition of the material is confirmed by powder XRD and EDX measurements. The formation of an oxygen vacant Gd/Bi co-doped cubic zirconia lattice was also confirmed by Raman spectroscopy study. With the incorporation of Bi and Gd ions, the cubic Zr Bi Gd O phase showed relaxor type high κ dielectric behaviour ( ' = 9725 at 600 °C at applied frequency 20 kHz for Zr Bi Gd O ) with approaching 600 °C. The high polarizability of the Bi ion coupled with synergistic interaction of Bi and Gd in the host ZrO lattice seems to create the more labile oxide ion vacancies that enable superior oxide-ion transport resulting in high oxide ion conductivity ( > 10 S cm , > 500 °C for Zr Bi Gd O ) at relatively lower temperatures.
ISSN:2046-2069
2046-2069
DOI:10.1039/d2ra01867e