Active site imprinting on Ti oxocluster metal-organic frameworks for photocatalytic hydrogen release from formic acid
On-board hydrogen release from liquid organic carriers is a process that can make feasible the use of H 2 as a transportation fuel. Formic acid is considered as one of the most convenient liquid hydrogen organic carriers, and since it can be easily obtained from CO 2 , it is water soluble which make...
Gespeichert in:
Veröffentlicht in: | Energy & environmental science 2023-01, Vol.16 (1), p.167-177 |
---|---|
Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | On-board hydrogen release from liquid organic carriers is a process that can make feasible the use of H
2
as a transportation fuel. Formic acid is considered as one of the most convenient liquid hydrogen organic carriers, and since it can be easily obtained from CO
2
, it is water soluble which makes it unnecessary to recover the H
2
-depleted byproducts. Compared to the more conventional thermal catalytic decomposition of formic acid, the use of light in combination with a photocatalyst has been much less explored. Herein, we report a new paradigm in MOF photocatalysis with the use of a microporous titanium oxocluster based metal-organic framework (Ti-MOF) endowed with formate-imprinted active sites, namely MIP-177-LT (MIP stands for Materials from Institute of Porous Materials of Paris, LT for Low Temperature), as a highly efficient photocatalyst for H
2
release from formic acid without the need to neutralize acidity or use sacrificial agents or noble metals. Noteworthily, a quantum efficiency of 22% has been determined for the photocatalytic H
2
release that is highly remarkable for a non-toxic noble metal-free photocatalyst.
MOFs offer great potential in the photocatalytic hydrogen release from liquid organic carriers: towards the use of on-board H
2
as a transportation fuel. |
---|---|
ISSN: | 1754-5692 1754-5706 |
DOI: | 10.1039/d2ee02258c |