Decoupling the metal-insulator transition temperature and hysteresis of VO 2 using Ge alloying and oxygen vacancies

The metal-to-insulator transition of VO underpins applications in thermochromics, neuromorphic computing, and infrared vision. Ge alloying is shown to elevate the transition temperature by promoting V-V dimerization, thereby expanding the stability of the monoclinic phase to higher temperatures. By suppressing the propensity for oxygen vacancy formation, Ge alloying renders the hysteresis of the transition exquisitely sensitive to oxygen stoichiometry.