Perpendicular-spin-transfer-torque magnetic-tunnel-junction neuron for spiking neural networks depending on the nanoscale grain size of the MgO tunnelling barrier

Perpendicular-spin-transfer-torque magnetic-tunnel-junction neuron for spiking neural networks depending on the nanoscale grain size of the MgO tunnelling barrier

Unlike conventional neuromorphic chips fabricated with C-MOSFETs and capacitors, those utilizing p-STT MTJ neuron devices can achieve fast switching (on the order of several tens of nanoseconds) and extremely low power consumption (

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Veröffentlicht in:Materials advances 2022-02, Vol.3 (3), p.1587-1593
Hauptverfasser: Baek, Jong-Ung, Choi, Jin-Young, Kim, Dong-Won, Kim, Ji-Chan, Jun, Han-Sol, Woo, Dae-Seong, Yi, Woo-Seok, Choi, Yo-Han, Seo, Hyung-Tak, Kim, Jae-Joon, Park, Jea-Gun
Format: Artikel
Sprache:eng
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Zusammenfassung:Unlike conventional neuromorphic chips fabricated with C-MOSFETs and capacitors, those utilizing p-STT MTJ neuron devices can achieve fast switching (on the order of several tens of nanoseconds) and extremely low power consumption (
ISSN:2633-5409
2633-5409
DOI:10.1039/d1ma00862e