Experimental evidence of wide bandgap in triclinic (001)-oriented Sn 5 O 2 (PO 4 ) 2 thin films on Y 2 O 3 buffered glass substrates
Sn 5 O 2 (PO 4 ) 2 is a promising p-type transparent semiconducting oxide. Phase-pure triclinic Sn 5 O 2 (PO 4 ) 2 thin films were grown by pulsed laser deposition using a Sn 2 (P 2 O 7 ) target with higher phosphorus content. The (001)-oriented growth of triclinic Sn 5 O 2 (PO 4 ) 2 on glass was ac...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-10, Vol.8 (40), p.14203-14207 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Sn
5
O
2
(PO
4
)
2
is a promising p-type transparent semiconducting oxide. Phase-pure triclinic Sn
5
O
2
(PO
4
)
2
thin films were grown by pulsed laser deposition using a Sn
2
(P
2
O
7
) target with higher phosphorus content. The (001)-oriented growth of triclinic Sn
5
O
2
(PO
4
)
2
on glass was achieved by means of a (111)-textured Y
2
O
3
buffer layer. STEM-EDX and XPS revealed that the composition of the obtained film is near-stoichiometric, thus indicating a suitable semiconducting material. The bandgap of the triclinic Sn
5
O
2
(PO
4
)
2
film was estimated to be as large as 3.87 eV, which is the first experimental evidence verifying a recent theoretical prediction by Q. Xu
et al.
,
Chem. Mater.
, 2017,
29
, 2459 quite closely. |
|---|---|
| ISSN: | 2050-7526 2050-7534 |
| DOI: | 10.1039/D0TC03213A |