Valley splitting in the antiferromagnetic heterostructure MnPSe 3 /WSe 2

The spin degeneracy in antiferromagnets hinders the spin splitting valleys, which limits their application in spintronic and valleytronic devices. In the two dimensional (2D) antiferromagnetic (AFM) heterostructure MnPSe 3 /WSe 2 , the coexistence of spin–orbit, spin–valley, and interlayer coupling...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2021-03, Vol.9 (10), p.3562-3568
Hauptverfasser: Wang, Bing-Jie, Sun, Yu-Yun, Chen, Ju, Ju, Weiwei, An, Yi-Peng, Gong, Shi-Jing
Format: Artikel
Sprache:eng
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Zusammenfassung:The spin degeneracy in antiferromagnets hinders the spin splitting valleys, which limits their application in spintronic and valleytronic devices. In the two dimensional (2D) antiferromagnetic (AFM) heterostructure MnPSe 3 /WSe 2 , the coexistence of spin–orbit, spin–valley, and interlayer coupling produces the spin splitting valence band maximum (VBM) from the nonmagnetic semiconductor WSe 2 and the spin splitting conduction band minimum (CBM) from the antiferromagnet MnPSe 3 , which results in a sizable spin- and k -resolved valley splitting larger than 30 meV. In addition, normal strain proves to be an effective approach to regulate valley splitting through interlayer coupling.
ISSN:2050-7526
2050-7534
DOI:10.1039/D0TC03065A