Valley splitting in the antiferromagnetic heterostructure MnPSe 3 /WSe 2
The spin degeneracy in antiferromagnets hinders the spin splitting valleys, which limits their application in spintronic and valleytronic devices. In the two dimensional (2D) antiferromagnetic (AFM) heterostructure MnPSe 3 /WSe 2 , the coexistence of spin–orbit, spin–valley, and interlayer coupling...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2021-03, Vol.9 (10), p.3562-3568 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The spin degeneracy in antiferromagnets hinders the spin splitting valleys, which limits their application in spintronic and valleytronic devices. In the two dimensional (2D) antiferromagnetic (AFM) heterostructure MnPSe
3
/WSe
2
, the coexistence of spin–orbit, spin–valley, and interlayer coupling produces the spin splitting valence band maximum (VBM) from the nonmagnetic semiconductor WSe
2
and the spin splitting conduction band minimum (CBM) from the antiferromagnet MnPSe
3
, which results in a sizable spin- and
k
-resolved valley splitting larger than 30 meV. In addition, normal strain proves to be an effective approach to regulate valley splitting through interlayer coupling. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/D0TC03065A |