Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr 3 interlayer grown by pulsed laser deposition

Heterojunction light-emitting diodes (LED) based on n-ZnO/CsPbBr 3 /p-GaN have been fabricated by using pulsed laser deposition (PLD). The effects of the CsPbBr 3 interlayer on the electroluminescence (EL) performance of n-ZnO/p-GaN have been systematically studied. It was found that the CsPbBr 3 interlayer plays an important role in the emission performance of the heterojunction LED. By adjusting the thickness of CsPbBr 3 , the emission peaks of the heterojunction LED change from violet to greenish-yellow, indicating that the electroluminescence characters can be tuned by the CsPbBr 3 film thickness. Detailed emission mechanisms influenced by the CsPbBr 3 film have been investigated using the Anderson band diagram. The results provide a new method for the fabrication of single-chip white LEDs.