Two-dimensional radical-cationic Mott insulator based on an electron donor containing neither a tetrathiafulvalene nor tetrathiapentalene skeleton

We report the structure and physical properties of a new radical-cationic Mott insulator -(BEDT-BDT)PF 6 (BEDT-BDT: benzo[1,2- g :4,5- g ′]bis(thieno[2,3- b ][1,4]dithiin)). The crystal structure belongs to a monoclinic system with a 1 : 1 donor/anion ratio. Based on this composition, the salt is co...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:CrystEngComm 2020-01, Vol.22 (36), p.5949-5953
Hauptverfasser: Kadoya, Tomofumi, Sugiura, Shiori, Tahara, Keishiro, Higashino, Toshiki, Kubo, Kazuya, Sasaki, Takahiko, Takimiya, Kazuo, Yamada, Jun-ichi
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report the structure and physical properties of a new radical-cationic Mott insulator -(BEDT-BDT)PF 6 (BEDT-BDT: benzo[1,2- g :4,5- g ′]bis(thieno[2,3- b ][1,4]dithiin)). The crystal structure belongs to a monoclinic system with a 1 : 1 donor/anion ratio. Based on this composition, the salt is considered a half-filled Mott insulator, in which the BEDT-BDT molecules form a mode arrangement. Owing to the strong electron correlation, the temperature dependence of the resistivity exhibits semiconducting behaviour. The static magnetic susceptibility first follows the Curie-Weiss law down to 15 K, but then follows the two-dimensional (2D) triangular Heisenberg model with J = 7.5 K below 15 K. Even at 2 K, this salt is paramagnetic and no magnetic order is formed. The tight-binding band calculation reveals a 2D Fermi surface. It is remarkable that -(BEDT-BDT)PF 6 forms a 2D electronic structure without any 1,3-dithiol-2-ylidene units, unlike tetrathiafulvalene and tetrathiapentalene donors. We have succeeded in developing a two-dimensional radical-cationic Mott insulator that does not contain a 1,3-dithiol-2-ylidene moiety.
ISSN:1466-8033
1466-8033
DOI:10.1039/d0ce00878h