Nickel formate induced high-level in situ Ni-doping of g-C 3 N 4 for a tunable band structure and enhanced photocatalytic performance
Metal doping is considered as an effective strategy to modify the electronic structure, optical absorption and charge separation of g-C 3 N 4 , thereby improving its photocatalytic activity for energy supply and environmental remediation. Herein, nickel formate is utilized for the first time for in...
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Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2019-10, Vol.7 (39), p.22385-22397 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Metal doping is considered as an effective strategy to modify the electronic structure, optical absorption and charge separation of g-C
3
N
4
, thereby improving its photocatalytic activity for energy supply and environmental remediation. Herein, nickel formate is utilized for the first time for
in situ
Ni-doping of g-C
3
N
4
nanosheets at a very high level
via
a one-step pyrolysis. Experimental results reveal the enhanced and expanded visible light absorption, narrowed band gap and suppressed charge recombination with the incorporation of Ni species. Furthermore, the positions of the valence band and conduction band of the g-C
3
N
4
samples can also be easily modulated by Ni-doping. All of this enables superior photocatalytic activity of the obtained Ni-doped g-C
3
N
4
in both dye degradation and hydrogen evolution under visible light compared with pure g-C
3
N
4
. Photocatalytic tests demonstrate that the Ni-doped g-C
3
N
4
sample with an appropriate doping concentration can give a rate constant approximately 10 times greater than that of bare g-C
3
N
4
for degradation of methyl orange, and can exhibit a hydrogen evolution rate of up to 155.71 μmol g
−1
h
−1
, about 1.6 times as high as that of pure g-C
3
N
4
. This work introduces a new rational design for metal-doped g-C
3
N
4
as an efficient visible-light-driven photocatalyst. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/C9TA04559G |