Synthesis of metallic mixed 3R and 2H Nb 1+x S 2 nanoflakes by chemical vapor deposition
In this work, we report the synthesis and characterization of mixed phase Nb S nanoflakes prepared by chemical vapor deposition. The as-grown samples show a high density of flakes (thickness ∼50 nm) that form a continuous film. Raman and X-ray diffraction data show that the samples consist of both 2...
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Veröffentlicht in: | Faraday discussions 2021-04, Vol.227, p.332-340 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this work, we report the synthesis and characterization of mixed phase Nb
S
nanoflakes prepared by chemical vapor deposition. The as-grown samples show a high density of flakes (thickness ∼50 nm) that form a continuous film. Raman and X-ray diffraction data show that the samples consist of both 2H and 3R phases, with the 2H phase containing a high concentration of Nb interstitials. These Nb interstitials sit in between the NbS
layers to form Nb
S
. Cross-sectional Energy Dispersive Spectroscopy analysis with transmission electron microscopy suggests that the 2H Nb
S
region is found in thinner flakes, while 3R NbS
is observed in thicker regions of the films. The evolution of the phase from 2H Nb
S
to 3R NbS
may be attributed to the change of the growth environment from Nb-rich at the start of the growth to sulfur-rich at the latter stage. It was also found that the incorporation of Nb interstitials is highly dependent on the temperature of the NbCl
precursor and the position of the substrate in the furnace. Samples grown at high NbCl
temperature and with substrate located closer to the NbCl
source show higher incorporation of Nb interstitials. Electrical measurements show linear I-V characteristics, indicating the metallic nature of the Nb
S
film with relatively low resistivity of 4.1 × 10
Ω cm. |
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ISSN: | 1359-6640 1364-5498 |
DOI: | 10.1039/C9FD00132H |