Realizing stable lithium deposition by in situ grown Cu 2 S nanowires inside commercial Cu foam for lithium metal anodes

Lithium metal is the most promising anode for next-generation rechargeable lithium batteries but Li dendrite growth and the resulting safety issues resulting from the non-uniform Li deposition hinder its practical use. Considering the high cost and complication of the currently reported approaches t...

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Veröffentlicht in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2019-01, Vol.7 (2), p.727-732
Hauptverfasser: Huang, Zhijia, Zhang, Chen, Lv, Wei, Zhou, Guangmin, Zhang, Yunbo, Deng, Yaqian, Wu, Haoliang, Kang, Feiyu, Yang, Quan-Hong
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Sprache:eng
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Zusammenfassung:Lithium metal is the most promising anode for next-generation rechargeable lithium batteries but Li dendrite growth and the resulting safety issues resulting from the non-uniform Li deposition hinder its practical use. Considering the high cost and complication of the currently reported approaches to suppress the Li dendrite growth, in this study we have modified a low-cost commercial three-dimensional (3D) Cu foam into a high-performance host for stable Li deposition by the growth of Cu 2 S nanowires (NWs) inside the Cu framework. The Cu 2 S NWs were grown by a simple and scalable chemical approach, and they reduce the local current density and homogenize the Li ion distribution because of the increased contact area of the 3D Cu 2 S NWs/Cu with the electrolyte. They also enable the formation of a protective solid electrolyte interphase (SEI) film containing Li 2 S 2 /Li 2 S. The prepared 3D Cu 2 S NWs/Cu current collector enables dendrite-free Li deposition/stripping and gives a stable cycling performance with a high coulombic efficiency (95.5% for more than 150 cycles at 2 mA cm −2 ). Full cells with LiFePO 4 as the cathode also exhibit improved cycling stability and improved coulombic efficiency, showing the potential of this host in the use of stable Li metal anodes.
ISSN:2050-7488
2050-7496
DOI:10.1039/C8TA10341K