Narrow optical gap ferroelectric Bi 2 ZnTiO 6 thin films deposited by RF sputtering

This work reports the deposition of single phase Bi 2 ZnTiO 6 thin films onto Pt/Si-based substrates using the RF-sputtering method and the respective structural, morphological, optical and local ferroelectric characterization. The thin film grows in the polycrystalline form with tetragonal P 4 mm s...

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Veröffentlicht in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2019-04, Vol.7 (17), p.10696-10701
Hauptverfasser: Figueiras, Fábio G., Fernandes, J. Ramiro A., Silva, J. P. B., Alikin, Denis O., Queirós, Eugénia C., Bernardo, César R., Barcelay, Y. R., Wrzesińska, Angelika, Belsley, M. S., Almeida, Bernardo, Tavares, Pedro B., Kholkin, Andrei L., Moreira, J. Agostinho, Almeida, Abílio
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Sprache:eng
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Zusammenfassung:This work reports the deposition of single phase Bi 2 ZnTiO 6 thin films onto Pt/Si-based substrates using the RF-sputtering method and the respective structural, morphological, optical and local ferroelectric characterization. The thin film grows in the polycrystalline form with tetragonal P 4 mm symmetry identified by X-ray diffraction. The lack of a spatial inversion centre was confirmed by the second harmonic generation. A narrow indirect optical gap of 1.48 eV was measured using optical diffuse reflectance. The ferroelectric domain reversal was further demonstrated through piezo-response force microscopy. This work demonstrates a practical method to fabricate the BZT perovskite phase, without resorting to high pressure and temperature conditions necessary to synthetize the bulk form, with outstanding optical and ferroelectric properties.
ISSN:2050-7488
2050-7496
DOI:10.1039/C8TA09425J