Ligand sensitized strong luminescence from Eu 3+ -doped LiYF 4 nanocrystals: a photon down-shifting strategy to increase solar-to-current conversion efficiency
Lanthanide (Ln)-doped nanocrystals generally display low luminescence quantum efficiency due to forbidden nature of the 4f-4f transition besides possessing low absorption cross sections (∼10 M cm ). Considering the demand for these materials, particularly for light emission and bioimaging applicatio...
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Veröffentlicht in: | Dalton transactions : an international journal of inorganic chemistry 2017-07, Vol.46 (29), p.9646-9653 |
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Sprache: | eng |
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Zusammenfassung: | Lanthanide (Ln)-doped nanocrystals generally display low luminescence quantum efficiency due to forbidden nature of the 4f-4f transition besides possessing low absorption cross sections (∼10 M
cm
). Considering the demand for these materials, particularly for light emission and bioimaging applications, it is very important to improve their quantum efficiency. This work demonstrates a strategy to enhance Si solar cell efficiency via sensitization of Eu
ions luminescence from colloidal nanocrystals. We have for the first time developed a simple ligand exchange approach to attach 4,4,4-trifluoro-1-phenyl-1,3 butanedione (TPB) to the surface of Eu
-doped LiYF
nanocrystals (NCs). Owing to the good overlap between the emission of the TPB ligands and the energy levels of Eu
ions, an efficient energy transfer takes place from the ligand to Eu
ions upon ultraviolet (UV) excitation of the ligand, leading to intense red emission. The sensitization of Eu
ions greatly enhanced the quantum yield of Eu
ions (∼31%) compared to the ∼5% obtained via direct excitation of Eu
ions (λ
= 394 nm) in Eu
-doped LiYF
NCs. A device was fabricated by embedding the nanocrystals on a Si solar cell to capture the UV photons and convert them into visible ones, which subsequently creates charge carriers inside the cell. Upon exposure to UV light, the nanocrystal embedded Si solar cell shows overall enhancement in the photocurrent upon excitation under UV radiation. |
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ISSN: | 1477-9226 1477-9234 |
DOI: | 10.1039/C7DT01339F |