Effect of B 2 O 3 addition on optical and structural properties of TiO 2 as a new blocking layer for multiple dye sensitive solar cell application (DSSC)
TiO 2 –B 2 O 3 sol–gel films were prepared using titanium( iv ) isopropoxide as a Ti source and boric acid (H 3 BO 3 ) as B precursor. B 2 O 3 doping was found to improve the characteristics of TiO 2 films making them suitable to use as blocking TiO 2 layers in DSSC B 2 O 3 acted as a flux and glass...
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Veröffentlicht in: | RSC advances 2016, Vol.6 (73), p.68819-68826 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | TiO
2
–B
2
O
3
sol–gel films were prepared using titanium(
iv
) isopropoxide as a Ti source and boric acid (H
3
BO
3
) as B precursor. B
2
O
3
doping was found to improve the characteristics of TiO
2
films making them suitable to use as blocking TiO
2
layers in DSSC B
2
O
3
acted as a flux and glass forming oxide leading to amorphous vitreous layers having an average thickness of 50 nm. Films were transparent, adherent and perfectly continuous without any leakage current. X-ray diffraction measurements prove that crystallinity decreases with boron content meaning that amorphous phase was favoured. Surface morphology was investigated by atomic force microscopy. It showed that film surface became more and more smooth. The E
g
Raman-active phonon mode at 145 cm
−1
reveals the same arrangement of TiO
2
octahedra observed in the anatase phase. The Lorentzian multipeak fitting showed the emergence of a new mode at 152 cm
−1
whose mode intensity increased with boron content; we attributed it to the presence of boron. The influence of B
2
O
3
dopant on the optical properties was examined by UV-visible spectroscopy and spectroscopic ellipsometry. Refractive index, extinction coefficient and optical band gap have been extracted by fitting ellipsometric spectra with the double new amorphous model. Difference between the optical gap values obtained from UV-visible spectra and those calculated by ellipsometry did not exceed 0.3 eV. The optical band gap increased from 3.4 to 3.9 eV by increasing boron content from 0 to 20%. The increase of
E
g
is expected to induce an enhanced output ddp into DSSC. |
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ISSN: | 2046-2069 2046-2069 |
DOI: | 10.1039/C6RA15060H |