Interfacial reactions between PbTe-based thermoelectric materials and Cu and Ag bonding materials

The development of reliable bonding materials for PbTe-based thermoelectric modules that can undergo long-term operations at high temperature is carried out. Two cost-effective materials, Cu and Ag, are isothermally hot-pressed to PbTe-based thermoelectric materials at 550 °C for 3 h under a pressur...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015-01, Vol.3 (4), p.159-1596
Hauptverfasser: Li, C. C, Drymiotis, F, Liao, L. L, Hung, H. T, Ke, J. H, Liu, C. K, Kao, C. R, Snyder, G. J
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Sprache:eng
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Zusammenfassung:The development of reliable bonding materials for PbTe-based thermoelectric modules that can undergo long-term operations at high temperature is carried out. Two cost-effective materials, Cu and Ag, are isothermally hot-pressed to PbTe-based thermoelectric materials at 550 °C for 3 h under a pressure of 40 MPa by the rapid hot-pressing method. Scanning electron microscopy, electron probe micro-analysis, and X-ray diffraction analysis are employed to identify intermetallic compounds, chemical reactions, and microstructure evolution after the initial assembly and subsequent isothermal aging at 400 °C and 550 °C. We find that Cu diffuses faster than Ag in PbTe. Neither Cu nor Ag is a good bonding material because they both react vigorously with Pb 0.6 Sn 0.4 Te. In order to be able to use Cu electrodes, it would be necessary to insert a diffusion barrier to prevent Cu diffusion into PbTe. The development of reliable bonding materials for PbTe-based thermoelectric modules that can undergo long-term operations at high temperature is carried out.
ISSN:2050-7526
2050-7534
DOI:10.1039/c5tc01662b