Interfacial reactions between PbTe-based thermoelectric materials and Cu and Ag bonding materials
The development of reliable bonding materials for PbTe-based thermoelectric modules that can undergo long-term operations at high temperature is carried out. Two cost-effective materials, Cu and Ag, are isothermally hot-pressed to PbTe-based thermoelectric materials at 550 °C for 3 h under a pressur...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015-01, Vol.3 (4), p.159-1596 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The development of reliable bonding materials for PbTe-based thermoelectric modules that can undergo long-term operations at high temperature is carried out. Two cost-effective materials, Cu and Ag, are isothermally hot-pressed to PbTe-based thermoelectric materials at 550 °C for 3 h under a pressure of 40 MPa by the rapid hot-pressing method. Scanning electron microscopy, electron probe micro-analysis, and X-ray diffraction analysis are employed to identify intermetallic compounds, chemical reactions, and microstructure evolution after the initial assembly and subsequent isothermal aging at 400 °C and 550 °C. We find that Cu diffuses faster than Ag in PbTe. Neither Cu nor Ag is a good bonding material because they both react vigorously with Pb
0.6
Sn
0.4
Te. In order to be able to use Cu electrodes, it would be necessary to insert a diffusion barrier to prevent Cu diffusion into PbTe.
The development of reliable bonding materials for PbTe-based thermoelectric modules that can undergo long-term operations at high temperature is carried out. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/c5tc01662b |