Enhanced stability of the HfO 2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid
Supplying a trace volume of ionic liquid, [bmim][Tf 2 N], which contains 5000 ppm of H 2 O, on the HfO 2 film in the conducting-bridge random access memory composed of Cu/HfO 2 /Pt allows improved efficiency of the memory properties: reduction of operating voltage and prevention of destruction of th...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015, Vol.3 (27), p.6966-6969 |
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| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Supplying a trace volume of ionic liquid, [bmim][Tf
2
N], which contains 5000 ppm of H
2
O, on the HfO
2
film in the conducting-bridge random access memory composed of Cu/HfO
2
/Pt allows improved efficiency of the memory properties: reduction of operating voltage and prevention of destruction of the electrolyte. |
|---|---|
| ISSN: | 2050-7526 2050-7534 |
| DOI: | 10.1039/C5TC01127B |