Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition
The β-ketoimine ligand [(Me)CN(H){ i Pr}–CHC(Me)O] ( L1H ) and the bis(β-ketoimine) ligands [(CH 2 ) 2 {N(H)C(Me)–CHC(R)O} 2 ] ( L2H2 , R = Me; L3H2 , R = C 6 H 5 ) linked by ethylene bridges have been used to form aluminium and gallium complexes: [Al(L 1 )Et 2 ] ( 1 ), [Ga(L 1 ) 2 Cl] ( 2 ), [AlL...
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| Veröffentlicht in: | New journal of chemistry 2015-01, Vol.39 (8), p.6585-6592 |
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| creator | Knapp, Caroline E. Marchand, Peter Dyer, Caragh Parkin, Ivan P. Carmalt, Claire J. |
| description | The β-ketoimine ligand [(Me)CN(H){
i
Pr}–CHC(Me)O] (
L1H
) and the bis(β-ketoimine) ligands [(CH
2
)
2
{N(H)C(Me)–CHC(R)O}
2
] (
L2H2
, R = Me;
L3H2
, R = C
6
H
5
) linked by ethylene bridges have been used to form aluminium and gallium complexes: [Al(L
1
)Et
2
] (
1
), [Ga(L
1
)
2
Cl] (
2
), [AlL
2
(O
i
Pr)] (
3
) and [GaL
3
Me] (
4
). The complexes were characterised by NMR spectroscopy, mass spectroscopy, and single crystal X-ray diffraction, with the exception of
1
which was isolated as an oil. Compounds
1–4
have been used for the first time as single source precursors for the deposition of Al
2
O
3
(
1
,
3
) and Ga
2
O
3
(
2
,
4
) respectively. Thin films were deposited
via
aerosol assisted (AA)CVD with toluene as the solvent. |
| doi_str_mv | 10.1039/C5NJ00947B |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1039_C5NJ00947B</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1039_C5NJ00947B</sourcerecordid><originalsourceid>FETCH-LOGICAL-c231t-9b357b0cc410387b99fa2f5f3755e9080b0bb17b7bb1d876d06cfd512ab0768a3</originalsourceid><addsrcrecordid>eNpFUM1KxDAYDKLgunrxCXIWql-aJmmOWvxl0YN6Lkma7EbapiTtwr69rQpeZuYwMzCD0CWBawJU3lTs9QVAFuLuCK0I5TKTOSfHsyZFkQEr-Ck6S-kLgBDByQpt3w_9uLPJJ6z6BpudisqMNvqkRh96HBzuw962WLVT53s_dT--rWrbRQ_RmimmEBN2Ic5x23mjWrxXQ5gibuwQkl-KztGJU22yF3-8Rp8P9x_VU7Z5e3yubjeZySkZM6kpExqMKeY5pdBSOpU75qhgzEooQYPWRGgxY1MK3gA3rmEkVxoELxVdo6vfXhNDStG6eoi-U_FQE6iXi-r_i-g3ulNbnA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Knapp, Caroline E. ; Marchand, Peter ; Dyer, Caragh ; Parkin, Ivan P. ; Carmalt, Claire J.</creator><creatorcontrib>Knapp, Caroline E. ; Marchand, Peter ; Dyer, Caragh ; Parkin, Ivan P. ; Carmalt, Claire J.</creatorcontrib><description>The β-ketoimine ligand [(Me)CN(H){
i
Pr}–CHC(Me)O] (
L1H
) and the bis(β-ketoimine) ligands [(CH
2
)
2
{N(H)C(Me)–CHC(R)O}
2
] (
L2H2
, R = Me;
L3H2
, R = C
6
H
5
) linked by ethylene bridges have been used to form aluminium and gallium complexes: [Al(L
1
)Et
2
] (
1
), [Ga(L
1
)
2
Cl] (
2
), [AlL
2
(O
i
Pr)] (
3
) and [GaL
3
Me] (
4
). The complexes were characterised by NMR spectroscopy, mass spectroscopy, and single crystal X-ray diffraction, with the exception of
1
which was isolated as an oil. Compounds
1–4
have been used for the first time as single source precursors for the deposition of Al
2
O
3
(
1
,
3
) and Ga
2
O
3
(
2
,
4
) respectively. Thin films were deposited
via
aerosol assisted (AA)CVD with toluene as the solvent.</description><identifier>ISSN: 1144-0546</identifier><identifier>EISSN: 1369-9261</identifier><identifier>DOI: 10.1039/C5NJ00947B</identifier><language>eng</language><ispartof>New journal of chemistry, 2015-01, Vol.39 (8), p.6585-6592</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c231t-9b357b0cc410387b99fa2f5f3755e9080b0bb17b7bb1d876d06cfd512ab0768a3</citedby><cites>FETCH-LOGICAL-c231t-9b357b0cc410387b99fa2f5f3755e9080b0bb17b7bb1d876d06cfd512ab0768a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Knapp, Caroline E.</creatorcontrib><creatorcontrib>Marchand, Peter</creatorcontrib><creatorcontrib>Dyer, Caragh</creatorcontrib><creatorcontrib>Parkin, Ivan P.</creatorcontrib><creatorcontrib>Carmalt, Claire J.</creatorcontrib><title>Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition</title><title>New journal of chemistry</title><description>The β-ketoimine ligand [(Me)CN(H){
i
Pr}–CHC(Me)O] (
L1H
) and the bis(β-ketoimine) ligands [(CH
2
)
2
{N(H)C(Me)–CHC(R)O}
2
] (
L2H2
, R = Me;
L3H2
, R = C
6
H
5
) linked by ethylene bridges have been used to form aluminium and gallium complexes: [Al(L
1
)Et
2
] (
1
), [Ga(L
1
)
2
Cl] (
2
), [AlL
2
(O
i
Pr)] (
3
) and [GaL
3
Me] (
4
). The complexes were characterised by NMR spectroscopy, mass spectroscopy, and single crystal X-ray diffraction, with the exception of
1
which was isolated as an oil. Compounds
1–4
have been used for the first time as single source precursors for the deposition of Al
2
O
3
(
1
,
3
) and Ga
2
O
3
(
2
,
4
) respectively. Thin films were deposited
via
aerosol assisted (AA)CVD with toluene as the solvent.</description><issn>1144-0546</issn><issn>1369-9261</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpFUM1KxDAYDKLgunrxCXIWql-aJmmOWvxl0YN6Lkma7EbapiTtwr69rQpeZuYwMzCD0CWBawJU3lTs9QVAFuLuCK0I5TKTOSfHsyZFkQEr-Ck6S-kLgBDByQpt3w_9uLPJJ6z6BpudisqMNvqkRh96HBzuw962WLVT53s_dT--rWrbRQ_RmimmEBN2Ic5x23mjWrxXQ5gibuwQkl-KztGJU22yF3-8Rp8P9x_VU7Z5e3yubjeZySkZM6kpExqMKeY5pdBSOpU75qhgzEooQYPWRGgxY1MK3gA3rmEkVxoELxVdo6vfXhNDStG6eoi-U_FQE6iXi-r_i-g3ulNbnA</recordid><startdate>20150101</startdate><enddate>20150101</enddate><creator>Knapp, Caroline E.</creator><creator>Marchand, Peter</creator><creator>Dyer, Caragh</creator><creator>Parkin, Ivan P.</creator><creator>Carmalt, Claire J.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20150101</creationdate><title>Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition</title><author>Knapp, Caroline E. ; Marchand, Peter ; Dyer, Caragh ; Parkin, Ivan P. ; Carmalt, Claire J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c231t-9b357b0cc410387b99fa2f5f3755e9080b0bb17b7bb1d876d06cfd512ab0768a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Knapp, Caroline E.</creatorcontrib><creatorcontrib>Marchand, Peter</creatorcontrib><creatorcontrib>Dyer, Caragh</creatorcontrib><creatorcontrib>Parkin, Ivan P.</creatorcontrib><creatorcontrib>Carmalt, Claire J.</creatorcontrib><collection>CrossRef</collection><jtitle>New journal of chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Knapp, Caroline E.</au><au>Marchand, Peter</au><au>Dyer, Caragh</au><au>Parkin, Ivan P.</au><au>Carmalt, Claire J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition</atitle><jtitle>New journal of chemistry</jtitle><date>2015-01-01</date><risdate>2015</risdate><volume>39</volume><issue>8</issue><spage>6585</spage><epage>6592</epage><pages>6585-6592</pages><issn>1144-0546</issn><eissn>1369-9261</eissn><abstract>The β-ketoimine ligand [(Me)CN(H){
i
Pr}–CHC(Me)O] (
L1H
) and the bis(β-ketoimine) ligands [(CH
2
)
2
{N(H)C(Me)–CHC(R)O}
2
] (
L2H2
, R = Me;
L3H2
, R = C
6
H
5
) linked by ethylene bridges have been used to form aluminium and gallium complexes: [Al(L
1
)Et
2
] (
1
), [Ga(L
1
)
2
Cl] (
2
), [AlL
2
(O
i
Pr)] (
3
) and [GaL
3
Me] (
4
). The complexes were characterised by NMR spectroscopy, mass spectroscopy, and single crystal X-ray diffraction, with the exception of
1
which was isolated as an oil. Compounds
1–4
have been used for the first time as single source precursors for the deposition of Al
2
O
3
(
1
,
3
) and Ga
2
O
3
(
2
,
4
) respectively. Thin films were deposited
via
aerosol assisted (AA)CVD with toluene as the solvent.</abstract><doi>10.1039/C5NJ00947B</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1144-0546 |
| ispartof | New journal of chemistry, 2015-01, Vol.39 (8), p.6585-6592 |
| issn | 1144-0546 1369-9261 |
| language | eng |
| recordid | cdi_crossref_primary_10_1039_C5NJ00947B |
| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| title | Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition |
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