Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition

The β-ketoimine ligand [(Me)CN(H){ i Pr}–CHC(Me)O] ( L1H ) and the bis(β-ketoimine) ligands [(CH 2 ) 2 {N(H)C(Me)–CHC(R)O} 2 ] ( L2H2 , R = Me; L3H2 , R = C 6 H 5 ) linked by ethylene bridges have been used to form aluminium and gallium complexes: [Al(L 1 )Et 2 ] ( 1 ), [Ga(L 1 ) 2 Cl] ( 2 ), [AlL 2 (O i Pr)] ( 3 ) and [GaL 3 Me] ( 4 ). The complexes were characterised by NMR spectroscopy, mass spectroscopy, and single crystal X-ray diffraction, with the exception of 1 which was isolated as an oil. Compounds 1–4 have been used for the first time as single source precursors for the deposition of Al 2 O 3 ( 1 , 3 ) and Ga 2 O 3 ( 2 , 4 ) respectively. Thin films were deposited via aerosol assisted (AA)CVD with toluene as the solvent.