Near infrared photoluminescence of the univalent bismuth impurity center in leucite and pollucite crystal hosts
The bismuth doped aluminosilicate phases leucite (KAlSi 2 O 6 ), gallium leucite (KGaSi 2 O 6 ) and pollucite (CsAlSi 2 O 6 ) display broadband NIR photoluminescence. The active center, responsible for this luminescence, is the Bi + monocation, which substitutes for the large alkali metal cations. T...
Gespeichert in:
| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015-01, Vol.3 (15), p.3592-3598 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The bismuth doped aluminosilicate phases leucite (KAlSi
2
O
6
), gallium leucite (KGaSi
2
O
6
) and pollucite (CsAlSi
2
O
6
) display broadband NIR photoluminescence. The active center, responsible for this luminescence, is the Bi
+
monocation, which substitutes for the large alkali metal cations. The Al,Si-disorder in the aluminosilicate framework of studied crystal phases results in the heterogeneity of Bi
+
luminescent center population, which manifests itself in the characteristic dependency of the luminescence spectrum shape on the excitation wavelength. The relation of NIR emission in Bi
+
-doped leucite and pollucite phases to the luminescent properties of bismuth-doped glasses is also discussed.
The bismuth doped aluminosilicate phases leucite (KAlSi
2
O
6
), gallium leucite (KGaSi
2
O
6
) and pollucite (CsAlSi
2
O
6
) display broadband NIR photoluminescence. |
|---|---|
| ISSN: | 2050-7526 2050-7534 |
| DOI: | 10.1039/c4tc02606c |