Scalable high-mobility MoS 2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

Scalable high-mobility MoS 2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

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Veröffentlicht in:Nanoscale 2014, Vol.6 (21), p.12792-12797
Hauptverfasser: Huang, Chung-Che, Al-Saab, Feras, Wang, Yudong, Ou, Jun-Yu, Walker, John C., Wang, Shuncai, Gholipour, Behrad, Simpson, Robert E., Hewak, Daniel W.
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container_end_page 12797
container_issue 21
container_start_page 12792
container_title Nanoscale
container_volume 6
creator Huang, Chung-Che
Al-Saab, Feras
Wang, Yudong
Ou, Jun-Yu
Walker, John C.
Wang, Shuncai
Gholipour, Behrad
Simpson, Robert E.
Hewak, Daniel W.
description
doi_str_mv 10.1039/C4NR04228J
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title Scalable high-mobility MoS 2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature
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