Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire

Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performan...

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Veröffentlicht in:Nanoscale 2014-10, Vol.6 (20), p.12009-12017
Hauptverfasser: Wang, Xingfu, Zhang, Yong, Chen, Xinman, He, Miao, Liu, Chao, Yin, Yian, Zou, Xianshao, Li, Shuti
Format: Artikel
Sprache:eng
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Zusammenfassung:Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 10(4) A W(-1)) and EQE value (up to 10(5)), as well as ultrafast (
ISSN:2040-3364
2040-3372
DOI:10.1039/c4nr03581j